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About Us

About Us

Establishing a Low-Cost, High-Efficiency Manufacturing Technology for Gallium Oxide Semiconductor Substrates

In collaboration with Tohoku University, we will produce high-quality gallium oxide, a promising wide bandgap semiconductor, primarily using the OCCC method—not require precious metal crucibles.

Our proprietary “OCCC method” is an innovative crystal growth technology. This groundbreaking approach replaces the typically expensive iridium used in conventional crystal growth with inexpensive materials like copper and water, enabling significant cost reduction while maintaining high quality.

FOX's Business Areas

Ingot
Single Crystal Manufacturing

Polishing

Film deposition
wafer completed

Foundry semiconductor manufacturer

Product

Reason why we specializing in wafer and material manufacturing

Our Vision: Sustainable Manufacturing Technologies and Environmental Impact Reduction

The OCCC method, which enables crystal growth without the use of precious metal crucibles, is attracting attention as an innovative technology that fundamentally improves the life cycle assessment (LCA) of β-Ga2O3 wafer manufacturing processes for next-generation power semiconductors. It enhances material utilization efficiency while significantly reducing environmental impact.
By promoting the social implementation and widespread adoption of β-Ga2O3 power semiconductors, our company aims to fundamentally address the issue of power loss inherent in conventional Si semiconductors. Through this initiative, we will drive the development of environmentally conscious power semiconductor technologies and contribute to achieving carbon neutrality in the power sector by 2050.

*NICHe: New Industry Creation Hatchery Center (Collaborative Research Center for Future Science and Technology)
*OCCC: Oxide Crystal growth from Cold Crucible
*LCA: Life Cycle Assessment

Please see below for papers on the OCCC method.